The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 01, 2025

Filed:

Sep. 02, 2021
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Ruilong Xie, Niskayuna, NY (US);

Robert Robison, Rexford, NY (US);

Hemanth Jagannathan, Niskayuna, NY (US);

Jay William Strane, Warwick, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H10D 30/01 (2025.01); H10D 30/62 (2025.01); H10D 30/63 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/83 (2025.01);
U.S. Cl.
CPC ...
H10D 84/834 (2025.01); H10D 30/025 (2025.01); H10D 30/6219 (2025.01); H10D 30/63 (2025.01); H10D 84/0193 (2025.01); H10D 84/038 (2025.01);
Abstract

A self-aligned C-shaped vertical field effect transistor includes a semiconductor substrate having an uppermost surface and a fin structure on the uppermost surface of the semiconductor substrate. The fin structure has two adjacent vertical segments with rounded ends that extend perpendicularly from the uppermost surface of the semiconductor substrate and a horizontal segment that extends between and connects the two adjacent vertical segments. An opening is located between the two adjacent vertical segments on a side of the fin structure opposite to the horizontal segment.


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