The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 01, 2025

Filed:

Dec. 29, 2021
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Ruilong Xie, Niskayuna, NY (US);

Junli Wang, Slingerlands, NY (US);

Brent A Anderson, Jericho, VT (US);

Chen Zhang, Guilderland, NY (US);

Heng Wu, Guilderland, NY (US);

Alexander Reznicek, Troy, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/62 (2025.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H10D 64/01 (2025.01);
U.S. Cl.
CPC ...
H10D 30/6211 (2025.01); H01L 23/5226 (2013.01); H01L 23/5286 (2013.01); H10D 64/018 (2025.01);
Abstract

A channel fin extends vertically above a bottom source/drain region, a protective liner is positioned along opposite sidewalls of the bottom source/drain region. The bottom source/drain region is positioned above a semiconductor layer in contact with a first portion of an inner spacer. A first metal layer is positioned between the first portion of the inner spacer and a second portion of the inner spacer, the first portion of the inner spacer partially covers a top surface of the first metal layer and the second portion of the inner spacer substantially covers a bottom surface of the first metal layer for providing a buried power rail. A shallow trench isolation region is positioned above an exposed portion of the first metal layer, the shallow trench isolation region is adjacent to the first portion of the inner spacer, the semiconductor layer, and the bottom source/drain region.


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