The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2025
Filed:
Sep. 24, 2021
Intel Corporation, Santa Clara, CA (US);
Nafees A. Kabir, Portland, OR (US);
Shriram Shivaraman, Hillsboro, OR (US);
Seung Hoon Sung, Portland, OR (US);
Uygar E. Avci, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A method of fabricating an integrated circuit structure comprises depositing an oxide insulator layer over a substrate having fins. A gate trench is formed within the oxide insulator layer with the fins extending above a surface of the oxide insulator layer within the gate trench. A semiconducting oxide material is deposited to conformally cover the oxide insulator layer, including on top surfaces and sidewalls of both the gate trench and the fins. A gate material is deposited to conformally cover the semiconducting oxide material, including on top surfaces and sidewalls of both the gate trench and the fins. An angled etch is performed to remove the gate material selective to the semiconducting oxide material from sidewalls of the gate trench, but not from sidewalls of the fins.