The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2025
Filed:
Jul. 06, 2021
Applicant:
Intel Corporation, Santa Clara, CA (US);
Inventors:
Hubert C. George, Portland, OR (US);
Ravi Pillarisetty, Portland, OR (US);
Jeanette M. Roberts, North Plains, OR (US);
Nicole K. Thomas, Portland, OR (US);
James S. Clarke, Portland, OR (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 29/12 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/76 (2006.01); B82Y 10/00 (2011.01); B82Y 40/00 (2011.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 29/401 (2013.01); H01L 29/122 (2013.01); H01L 29/42376 (2013.01); H01L 29/66977 (2013.01); H01L 29/7613 (2013.01); B82Y 10/00 (2013.01); B82Y 40/00 (2013.01); H01L 23/53285 (2013.01);
Abstract
Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a quantum well stack structure of a quantum dot device, wherein the quantum well stack structure includes an insulating material to define multiple rows of quantum dot formation regions; and a gate that extends over multiple ones of the rows.