The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2025
Filed:
Mar. 21, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Pei-Jen Wang, Nantou County, TW;
Ching-Hung Kao, Tainin, TW;
Tzy-Kuang Lee, Taichung, TW;
Meng-Chang Ho, Taichung, TW;
Kun-Mao Wu, Taoyuan, TW;
Taiwan Semicondcutor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A method of forming a capacitor is disclosed. The method includes forming a portion of a metallization layer on a substrate, forming a via layer on the substrate, and forming a first electrode between the metallization layer and the via layer, where the first electrode is electrically connected to the metallization layer. The method also includes forming a second electrode between the metallization layer and the via layer, where the second electrode is electrically connected to the via layer, and forming a dielectric layer between the first electrode and the second electrode, where the first electrode is not electrically connected to any other conductors other than through the metallization layer, and where the second electrode is not electrically connected to any conductors other than through the via layer.