The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2025
Filed:
Jul. 22, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A semiconductor structure includes a first semiconductor device formed over a substrate. The first semiconductor device includes a first source/drain feature over the substrate, a first gate structure over the substrate, a first conductive feature over the first source/drain feature, and a first insulation layer between the first gate structure and the first conductive feature, wherein the first insulation layer comprises a first contact etching stop layer (CESL) in contact with the first source/drain feature. The semiconductor structure includes a second semiconductor device formed over the substrate, including a second source/drain feature over the substrate, a second gate structure over the substrate, a second conductive feature over the second source/drain feature, and a second insulation layer between the second gate structure and the second conductive feature, the second insulation layer comprises a second CESL in contact with the second source/drain feature, wherein a thickness of the first CESL is less than a thickness of the second CESL.