The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 01, 2025

Filed:

Jul. 28, 2022
Applicant:

Shenzhen Xiuyuan Electronic Technology Co., Ltd., Shenzhen, CN;

Inventors:

Yunzhi Ling, Guangzhou, CN;

Siliang He, Guangzhou, CN;

Jianguo Ma, Guangzhou, CN;

Yuhao Bi, Guangzhou, CN;

Xingyu Liu, Guangzhou, CN;

Chuan Hu, Guangzhou, CN;

Zhitao Chen, Guangzhou, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01R 4/58 (2006.01); H01R 43/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/13 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/11 (2013.01); H01L 24/16 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 24/73 (2013.01); H01L 24/81 (2013.01); H01L 24/83 (2013.01); H01L 24/92 (2013.01); H01R 4/58 (2013.01); H01R 43/00 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/05573 (2013.01); H01L 2224/1146 (2013.01); H01L 2224/13016 (2013.01); H01L 2224/13082 (2013.01); H01L 2224/13109 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/16057 (2013.01); H01L 2224/2919 (2013.01); H01L 2224/321 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/81201 (2013.01); H01L 2224/81898 (2013.01); H01L 2224/81948 (2013.01); H01L 2224/83102 (2013.01); H01L 2224/83855 (2013.01); H01L 2224/9205 (2013.01); H01L 2924/0665 (2013.01); H01L 2924/20104 (2013.01); H01L 2924/20105 (2013.01); H01L 2924/20106 (2013.01); H01L 2924/20107 (2013.01); H01L 2924/20108 (2013.01);
Abstract

A substrate bonding method includes: providing a first and a second substrate; forming, on the first substrate, a first metal micro-bump array including first metal pillar(s) formed on the first substrate and first metal nanowires formed thereon and spaced apart from each other; forming, on the second substrate, a second metal micro-bump array including second metal pillar(s) formed on the second substrate and second metal nanowires formed thereon and spaced apart from each other; pressing the first substrate onto the second substrate, such that the first and second metal micro-bump arrays are positioned and staggered with each other, forming a physically interwoven interlocking structure between the first and second metal nanowires; applying a filling material between the first and second substrates; curing the filling material to form a bonding cavity; and then performing confined heating reflux on the first and second metal micro-bump arrays in the bonding cavity.


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