The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 01, 2025

Filed:

Nov. 28, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Yi-Ching Liu, Hsinchu, TW;

Chia-En Huang, Hsinchu, TW;

Yih Wang, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/10 (2006.01); G11C 8/08 (2006.01); G11C 8/10 (2006.01);
U.S. Cl.
CPC ...
G11C 8/08 (2013.01); G11C 8/10 (2013.01);
Abstract

A memory circuit includes a first memory cell on a first layer, a second memory cell on a second layer different from the first layer, a first select transistor on a third layer different from the first layer and the second layer, and a first bit line extending in a first direction, and being coupled to the first memory cell and the second memory cell. The memory circuit further includes a first source line extending in the first direction, being coupled to the first memory cell, the second memory cell and the first select transistor, and being separated from the first bit line in a second direction different from the first direction. memory circuit includes a second source line extending in the first direction, and being coupled to the first select transistor.


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