The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2025
Filed:
Mar. 15, 2021
Intel Corporation, Santa Clara, CA (US);
Narayanan Ramanan, San Jose, CA (US);
Intel NDTM US LLC, Santa Clara, CA (US);
Abstract
Sensing circuits and techniques for NAND memory that can enable improved read disturb on the selected SGS are described herein. In one example, a reverse sensing circuit includes circuitry coupled with a bitline of the string of NAND memory cells to perform a sensing operation. The circuitry charges the bitline of the string of NAND memory cells to a target bitline voltage and applies a voltage to the source line that is higher than the bitline voltage. The sense current flows through the string from the source line to the bitline. The voltage at a sensing node that is indicative of a threshold voltage of a memory cell can then be detected.