The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2025
Filed:
Apr. 29, 2022
United Microelectronics Corp., Hsin-Chu, TW;
Kuo-Hsing Lee, Hsinchu County, TW;
Sheng-Yuan Hsueh, Tainan, TW;
Chih-Kai Kang, Tainan, TW;
Chun-Hsien Lin, Tainan, TW;
Chi-Horn Pai, Tainan, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A method for fabricating a semiconductor device includes the steps of first providing a substrate having a first NMOS region, a first PMOS region, a second NMOS region, a second PMOS region, and a MOS capacitor region, forming a fin NMOS transistor on the first NMOS region, forming a fin PMOS transistor on the first PMOS region, forming a planar NMOS transistor on the second NMOS region, forming a planar PMOS transistor on the second PMOS region, and forming a planar MOS capacitor on the MOS capacitor region.