The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 25, 2025

Filed:

May. 07, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Kam-Tou Sio, Zhubei, TW;

Jiann-Tyng Tzeng, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2006.01); G06F 30/392 (2020.01); H01L 21/768 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5286 (2013.01); G06F 30/392 (2020.01); H01L 21/768 (2013.01); H01L 27/0886 (2013.01);
Abstract

A semiconductor device includes a first active region, disposed on a first side of a substrate, that extends along a first lateral direction. The semiconductor device includes a second active region, disposed on the first side, that extends along the first lateral direction. The first active region has a first conduction type and the second active region has a second conduction type opposite to the first conduction type. The semiconductor device includes a first interconnect structure, formed on a second side of the substrate opposite to the first side, that includes: a first portion extending along the first lateral direction and vertically disposed below the first active region; and a second portion extending along a second lateral direction. The first latera direction is perpendicular to the first lateral direction.


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