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H01L 29/10 (2006.01); G06F 7/505 (2006.01); G06F 30/39 (2020.01); G06F 30/398 (2020.01); H01L 21/306 (2006.01); H01L 21/308 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 23/535 (2006.01); H01L 27/088 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); G06F 117/12 (2020.01); G06F 119/12 (2020.01);

U.S. Cl.

CPC ...

H01L 21/823807 (2013.01); G06F 7/505 (2013.01); G06F 30/39 (2020.01); G06F 30/398 (2020.01); H01L 21/30608 (2013.01); H01L 21/308 (2013.01); H01L 21/823412 (2013.01); H01L 21/823418 (2013.01); H01L 21/823431 (2013.01); H01L 21/823814 (2013.01); H01L 21/823821 (2013.01); H01L 21/823871 (2013.01); H01L 21/823878 (2013.01); H01L 23/535 (2013.01); H01L 27/0886 (2013.01); H01L 27/0924 (2013.01); H01L 29/0653 (2013.01); H01L 29/0847 (2013.01); H01L 29/1037 (2013.01); H01L 29/41791 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); G06F 2117/12 (2020.01); G06F 2119/12 (2020.01);

Abstract

In a method of manufacturing a semiconductor device, first to third active fins are formed on a substrate. Each of the first to third active fins extends in a first direction, and the second active fin, the first active fin, and the third active fin are disposed in this order in a second direction crossing the first direction. The second active fin is removed using a first etching mask covering the first and third active fins. The third active fin is removed using a second etching mask covering the first active fin and a portion of the substrate from which the second active fin is removed. A first gate structure is formed on the first active fin. A first source/drain layer is formed on a portion of the first active fin adjacent the first gate structure.

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