The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2025
Filed:
Nov. 15, 2023
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
A method includes: forming a bottom electrode over a substrate; depositing a first seed layer over the bottom electrode, the first seed layer having an amorphous crystal phase; performing a first surface treatment on the first seed layer, wherein after the first surface treatment the first seed layer includes at least one of a tetragonal crystal phase and an orthorhombic crystal phase; depositing a dielectric layer over the bottom electrode adjacent to the first seed layer; depositing an upper layer over the dielectric layer; and performing a thermal operation on the dielectric layer to thereby convert the dielectric layer into a ferroelectric layer.