The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 25, 2025

Filed:

Jun. 08, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Nail Etkin Can Akkaya, Hsinchu, TW;

Mahmut Sinangil, Campbell, CA (US);

Yih Wang, Hsinchu, TW;

Jonathan Tsung-Yung Chang, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 5/14 (2006.01); G11C 7/12 (2006.01); G11C 11/419 (2006.01); H10B 10/00 (2023.01);
U.S. Cl.
CPC ...
G11C 5/145 (2013.01); G11C 7/12 (2013.01); G11C 11/419 (2013.01); H10B 10/18 (2023.02);
Abstract

A device includes a memory array formed on a front side of a substrate. The memory array is accessible through a plurality of bit lines. The memory device includes a switch transistor formed on the front side of the substrate. The switch transistor is operatively coupled to the plurality of bit lines. The memory device includes a first capacitor formed on a back side of the substrate. The first capacitor is configured to reduce a voltage level present on at least one of the plurality of bit lines, in response to the switch transistor being turned off.


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