The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2025
Filed:
Jul. 20, 2020
Applicant:
Lam Research Corporation, Fremont, CA (US);
Inventors:
Wenbing Yang, Campbell, CA (US);
Tamal Mukherjee, Fremont, CA (US);
Zhongwei Zhu, Sunnyvale, CA (US);
Samantha SiamHwa Tan, Newark, CA (US);
Ran Lin, Fremont, CA (US);
Yang Pan, Los Altos, CA (US);
Ziad El Otell, Leuven, BE;
Yiwen Fan, Fremont, CA (US);
Assignee:
Lam Research Corporation, Fremont, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 50/01 (2023.01); H01J 37/32 (2006.01); H10N 50/10 (2023.01); H10N 50/80 (2023.01); H10N 50/85 (2023.01);
U.S. Cl.
CPC ...
H10N 50/01 (2023.02); H01J 37/32449 (2013.01); H10N 50/10 (2023.02); H10N 50/80 (2023.02); H10N 50/85 (2023.02); H01J 2237/334 (2013.01);
Abstract
A method is provided. A substrate situated in a chamber is exposed to a halogen-containing gas comprising an element selected from the group consisting of silicon, germanium, carbon, titanium, and tin, and igniting a plasma to modify a surface of the substrate and form a modified surface. The substrate is exposed to an activated activation gas to etch at least part of the modified surface.