The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2025
Filed:
Apr. 15, 2022
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Meng-Sheng Chang, Chu-bei, TW;
Yao-Jen Yang, Hsinchu County, TW;
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Abstract
A memory device includes a plurality of memory cells, each of which includes a first transistor, a second transistor, and a resistor operatively coupled to each other in series. Each of the first and second transistors include a sub-transistor, the sub-transistor having a channel structure, a source structure disposed on one side of the channel structure, and a drain structure disposed on the other side of the channel structure. The resistor includes a metal structure disposed above the first and second transistors. The channel structures, source structures, and drain structures of the sub-transistors are all formed in a first active region of a substrate.