The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 18, 2025

Filed:

Sep. 20, 2021
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Ruilong Xie, Niskayuna, NY (US);

Yao Yao, Albany, NY (US);

Andrew M. Greene, Slingerlands, NY (US);

Veeraraghavan S. Basker, Schenectady, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 21/8234 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 27/088 (2013.01); H01L 21/823437 (2013.01); H01L 21/823487 (2013.01); H01L 29/42392 (2013.01); H01L 29/66545 (2013.01);
Abstract

A semiconductor structure includes a first set of fins and a second set of fins, a dielectric pillar disposed between the first set of fins and the second set of fins, a bottom source/drain (S/D) region directly contacting a bottom surface of the first and second set of fins, and a top S/D region directly contacting a top surface of the first and second set of fins. A high-k metal gate (HKMG) is disposed between fins of the first set of fins and between fins of the second set of fins. The HKMG directly contacts sidewalls of the dielectric pillar. A width of the HKMG between the first set of fins is equal to a width of the HKMG between the second set of fins.


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