The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 18, 2025

Filed:

Aug. 04, 2021
Applicant:

United Microelectronics Corp., Hsinchu, TW;

Inventors:

Jia Fang Wu, Chiayi, TW;

Hsiang-Chieh Yen, Penghu County, TW;

Hsu-Sheng Huang, Kaohsiung, TW;

Zhi Jian Wang, Tainan, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 22/30 (2013.01); H01L 22/12 (2013.01); H01L 23/5226 (2013.01);
Abstract

Provided are a multiple-level interconnect structure having a scatterometry test layer and a manufacturing method thereof. The multiple level interconnect structure includes a patterned reflective layer, a bulk reflective layer and a patterned test layer. The patterned reflective layer is disposed on a substrate and includes a first reflective pattern and a second reflective pattern separated from each other. The bulk reflective layer is disposed on the patterned reflective layer. The patterned test layer is disposed on the bulk reflective layer.


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