The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2025
Filed:
Aug. 31, 2021
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Chia-Chung Chen, Keelung, TW;
Shufang Fu, Hsinchu County, TW;
Kuan-Hung Liu, Hsinchu, TW;
Chiao-Chun Hsu, Hsinchu, TW;
Fu-Yu Shih, Hsinchu, TW;
Chi-Feng Huang, Hsinchu County, TW;
Chu Fu Chen, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
A calibration method for emulating a Group III-V semiconductor device, a method for determining trap location within a Group III-V semiconductor device and method for manufacturing a Group III-V semiconductor device are provided. Actual tape-out is performed according to an actual process flow of the Group III-V semiconductor device for manufacturing the Group III-V semiconductor devices and PCM Group III-V semiconductor device. Actual electrical performances of the Group III-V semiconductor devices and the PCM Group III-V semiconductor device are obtained and the actual electrical performances of the Group III-V semiconductor devices and the PCM Group III-V semiconductor device are compared to determine locations where one or more traps appear.