The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2025
Filed:
Jan. 05, 2022
Egtm Co., Ltd., Suwon-si, KR;
Jae Min Kim, Suwon-si, KR;
Ha Na Kim, Suwon-si, KR;
Woong Jin Choi, Suwon-si, KR;
Ji Yeon Han, Suwon-si, KR;
Ju Hwan Jeong, Suwon-si, KR;
Hyeon Sik Cho, Suwon-si, KR;
EGTM CO., LTD., Suwon-si, KR;
Abstract
Disclosed is a method of forming an area-selective thin film, the method comprising supplying a nuclear growth retardant to the inside of the chamber in which the substrate is placed, so that the nuclear growth retardant is adsorbed to a non-growth region of the substrate; purging the interior of the chamber; supplying a precursor to the inside of the chamber, so that the precursor is adsorbed to a growth region of the substrate; purging the interior of the chamber; and supplying a reaction material to the inside of the chamber, so that the reaction material reacts with the adsorbed precursor to form the thin film.