The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 2025
Filed:
Mar. 24, 2022
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Chih-Chien Chang, Hsinchu, TW;
Shen-De Wang, Hsinchu County, TW;
Cheng-Hua Yang, Hsinchu, TW;
Linggang Fang, Singapore, SG;
Jianjun Yang, Singapore, SG;
Wei Ta, Singapore, SG;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 27/088 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/788 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7816 (2013.01); H01L 27/088 (2013.01); H01L 29/42328 (2013.01); H01L 29/66484 (2013.01); H01L 29/6656 (2013.01); H01L 29/66689 (2013.01); H01L 29/66825 (2013.01); H01L 29/788 (2013.01); H01L 29/42324 (2013.01); H01L 29/42344 (2013.01);
Abstract
A power device includes a substrate, an ion well in the substrate, a body region in the ion well, a source doped region in the body region, a drain doped region in the ion well, and gates on the substrate between the source doped region and the drain doped region. The gates include a first gate adjacent to the source doped region, a second gate adjacent to the drain doped region, and a stacked gate structure between the first gate and the second gate.