The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 11, 2025

Filed:

Sep. 23, 2021
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Andrew Gaul, Halfmoon, NY (US);

Julien Frougier, Albany, NY (US);

Ruilong Xie, Niskayuna, NY (US);

Andrew M. Greene, Slingerlands, NY (US);

Christopher J. Waskiewicz, Rexford, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 21/02 (2006.01); H01L 29/06 (2006.01); H01L 29/24 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7606 (2013.01); H01L 21/02568 (2013.01); H01L 21/0259 (2013.01); H01L 29/0665 (2013.01); H01L 29/24 (2013.01); H01L 29/42392 (2013.01); H01L 29/66969 (2013.01); H01L 29/78618 (2013.01); H01L 29/78696 (2013.01);
Abstract

A stacked device is provided. The stacked device includes a plurality of dielectric support bridges on a substrate, and a first two-dimensional (2D) channel layer on each of the plurality of dielectric support bridges. The stacked device further includes a gate dielectric sheet on the first two-dimensional (2D) channel layer, and a second two-dimensional (2D) channel layer on the first two-dimensional (2D) channel layer. The stacked device further includes a second gate dielectric layer on the gate dielectric sheets.


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