The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 2025
Filed:
Dec. 10, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Chia-Hao Pao, Kaohsiung, TW;
Chih-Chuan Yang, Hsinchu, TW;
Shih-Hao Lin, Hsinchu, TW;
Kian-Long Lim, Hsinchu, TW;
Chih-Hsuan Chen, Hsinchu, TW;
Ping-Wei Wang, Hsin-Chu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method includes providing a substrate having a first region and a second region, forming a fin protruding from the first region, where the fin includes a first SiGe layer and a stack alternating Si layers and second SiGe layers disposed over the first SiGe layer and the first SiGe layer has a first concentration of Ge and each of the second SiGe layers has a second concentration of Ge that is greater than the first concentration, recessing the fin to form an S/D recess, recessing the first SiGe layer and the second SiGe layers exposed in the S/D recess, where the second SiGe layers are recessed more than the first SiGe layer, forming an S/D feature in the S/D recess, removing the recessed first SiGe layer and the second SiGe layers to form openings, and forming a metal gate structure over the fin and in the openings.