The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 11, 2025

Filed:

Feb. 23, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Guan-Lin Chen, Baoshan Township, Hsinchu County, TW;

Jung-Chien Cheng, Tainan, TW;

Kuo-Cheng Chiang, Zhubei, TW;

Shi-Ning Ju, Hsinchu, TW;

Chih-Hao Wang, Baoshan Township, Hsinchu County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/8234 (2006.01); H01L 29/423 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0665 (2013.01); H01L 21/823412 (2013.01); H01L 21/823481 (2013.01); H01L 29/0649 (2013.01); H01L 29/42392 (2013.01); H01L 29/78696 (2013.01);
Abstract

Semiconductor structures and methods for manufacturing the same are provided. The semiconductor structure includes a substrate and first channel structures and second channel structures formed over the substrate. The semiconductor structure also includes a dielectric fin structure formed between the first channel structures and the second channel structures. In addition, the dielectric fin structure includes a core portion and first connecting portions connected to the core portion. The semiconductor structure also includes a gate structure including a first portion. In addition, the first portion of the gate structure is formed around the first channel structures and covers the first connecting portions of the dielectric fin structure.


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