The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2025
Filed:
Mar. 24, 2022
Micron Technology, Inc., Boise, ID (US);
Stephen W. Russell, Boise, ID (US);
Enrico Varesi, Milan, IT;
David H. Wells, Boise, ID (US);
Paolo Fantini, Vimercate, IT;
Lorenzo Fratin, Buccinasco, IT;
Micron Technology, Inc., Boise, ID (US);
Abstract
Methods, systems, and devices for dense piers for three-dimensional memory arrays are described. In some examples, a memory device may include pier structures formed in contact with features formed from alternating layers of materials deposited over a substrate. For example, a memory device may include alternating layers of a first material and a second material. In some examples, the alternating layers may be formed into a pair of interleaved comb structures. Pier structures may be formed in contact with the cross sectional patterns, and may provide mechanical support of cross-sectional pattern of the remaining material. In some examples, the piers may further act as a separator between memory cells or other features of the memory device. For example, the piers may extend into at least a portion of the interleaved comb structures, and may accordingly act as barriers during subsequent depositions of materials.