The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 04, 2025

Filed:

Aug. 26, 2022
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Alyssa N. Scarbrough, Boise, ID (US);

Lifang Xu, Boise, ID (US);

Jordan D. Greenlee, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 43/20 (2023.01); G11C 16/08 (2006.01); H01L 21/768 (2006.01); H10B 43/35 (2023.01);
U.S. Cl.
CPC ...
H10B 43/20 (2023.02); H01L 21/76831 (2013.01); H01L 21/76843 (2013.01); H01L 21/76885 (2013.01); H10B 43/35 (2023.02); G11C 16/08 (2013.01);
Abstract

Methods, systems, and devices for staircase formation in a memory array are described. A first liner material may be deposited on a tread above a first contact surface and a portion of the first liner material may be doped. A second liner material may be deposited over the first liner and a portion of the second liner material may be doped. After doping the portions of the liner materials, the undoped portions of the liner materials may be removed so that the materials above a second contact surface can be at least partially removed via a first removal process. The doped portion of the first liner material may then be cut back so that a second removal process can expose the second contact surface and a third contact (while the first contact surface is protected from the removal process by the liner materials).


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