The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2025
Filed:
Oct. 21, 2021
Globalfoundries U.s. Inc., Malta, NY (US);
Steven M. Shank, Jericho, VT (US);
Anthony K. Stamper, Williston, VT (US);
Venkata N. R. Vanukuru, Karnataka, IN;
Mark Levy, Williston, VT (US);
GlobalFoundries U.S. Inc., Malta, NY (US);
Abstract
Structures for a transistor including regions for landing gate contacts and methods of forming a structure for a transistor that includes regions for landing gate contacts. The structure includes a field-effect transistor having a source region, a gate region, a gate with a sidewall, and a gate extension with a section adjoined to the sidewall. The structure further includes a dielectric layer over the field-effect transistor, and a gate contact positioned in the dielectric layer to land on at least the section of the gate extension.