The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2025
Filed:
Dec. 15, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Chih-Chuan Yang, Hsinchu, TW;
Wen-Chun Keng, Hsinchu County, TW;
Chong-De Lien, Hsinchu, TW;
Shih-Hao Lin, Hsinchu, TW;
Hsin-Wen Su, Hsinchu, TW;
Ping-Wei Wang, Hsin-Chu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
Semiconductor devices having improved source/drain features and methods for fabricating such are disclosed herein. An exemplary device includes a semiconductor layer stack disposed over a mesa structure of a substrate. The device further includes a metal gate disposed over the semiconductor layer stack and an inner spacer disposed on the mesa structure of the substrate. The device further includes a first epitaxial source/drain feature and a second epitaxial source/drain feature where the semiconductor layer stack is disposed between the first epitaxial source/drain feature and the second epitaxial source/drain feature. The device further includes a void disposed between the inner spacer and the first epitaxial source/drain feature.