The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 04, 2025

Filed:

May. 11, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Feng-Chien Hsieh, Pingtung, TW;

Yun-Wei Cheng, Taipei, TW;

Wei-Li Hu, Tainan, TW;

Kuo-Cheng Lee, Tainan, TW;

Cheng-Ming Wu, Tainan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 25/065 (2023.01);
U.S. Cl.
CPC ...
H01L 27/14634 (2013.01); H01L 25/0652 (2013.01); H01L 27/14612 (2013.01); H01L 27/14643 (2013.01); H01L 27/1469 (2013.01);
Abstract

Some implementations described herein provide pixel sensor configurations and methods of forming the same. In some implementations, one or more transistors of a pixel sensor are included on a circuitry die (e.g., an application specific integrated circuit (ASIC) die or another type of circuitry die) of an image sensor device. The one or more transistors may include a source follower transistor, a row select transistor, and/or another transistor that is used to control the operation of the pixel sensor. Including the one or more transistors of the pixel sensor (and other pixel sensors of the image sensor device) on the circuitry die reduces the area occupied by transistors in the pixel sensor on the sensor die. This enables the area for photon collection in the pixel sensor to be increased.


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