The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2025
Filed:
Aug. 04, 2023
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Ming-Chang Wen, Kaohsiung, TW;
Chang-Yun Chang, Taipei, TW;
Keng-Yao Chen, Hsinchu, TW;
Chen-Yu Tai, Hsinchu, TW;
Yi-Ting Fu, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING C0., LTD., Hsinchu, TW;
Abstract
The present disclosure describes fabricating devices with tunable gate height and effective capacitance. A method includes forming a first metal gate stack in a dummy region of a semiconductor substrate and a second metal gate stack in an active device region of the semiconductor substrate, and performing a chemical mechanical polishing (CMP) process using a slurry including charged abrasive nanoparticles. The first and second metal gate stacks are different in composition. The charged abrasive nanoparticles include a first concentration in the active device region different from a second concentration in the dummy region.