The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2025
Filed:
Nov. 13, 2023
Ansys, Inc., Canonsburg, PA (US);
Norman Chang, Fremont, CA (US);
Hsiming Pan, San Jose, CA (US);
Jimin Wen, Pleasanton, CA (US);
Deqi Zhu, San Jose, CA (US);
Wenbo Xia, Milpitas, CA (US);
Akhilesh Kumar, Milpitas, CA (US);
Wen-Tze Chuang, Yilan County, TW;
En-Cih Yang, New Taipei, TW;
Karthik Srinivasan, Cupertino, CA (US);
Ying-Shiun Li, Pleasanton, CA (US);
ANSYS, INC., Canonsburg, PA (US);
Abstract
Machine assisted systems and methods for enhancing the resolution of an IC thermal profile from a system analysis are described. These systems and methods can use a neural network based predictor, that has been trained to determine a temperature rise across an entire IC. The training of the predictor can include generating a representation of two or more templates identifying different portions of an integrated circuit (IC), each template associated with location parameters to position the template in the IC; performing thermal simulations for each respective template of the IC, each thermal simulation determining an output based on a power pattern of tiles of the respective template, the output indicating a change in temperature of a center tile of the respective template relative to a base temperature of the integrated circuit; and training a neural network. The trained predictor can be used to determine a temperature rise and then can be appended to a system level thermal profile of the IC to generate a detailed thermal profile of the IC.