The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 25, 2025

Filed:

Jul. 19, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Hai-Dang Trinh, Hsinchu, TW;

Chii-Ming Wu, Taipei, TW;

Hsing-Lien Lin, Hsin-Chu, TW;

Tzu-Chung Tsai, Hsinchu County, TW;

Fa-Shen Jiang, Taoyuan, TW;

Bi-Shen Lee, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 70/00 (2023.01); H10B 63/00 (2023.01);
U.S. Cl.
CPC ...
H10N 70/8833 (2023.02); H10B 63/30 (2023.02); H10N 70/026 (2023.02); H10N 70/063 (2023.02); H10N 70/826 (2023.02); H10N 70/841 (2023.02); H10N 70/023 (2023.02);
Abstract

Various embodiments of the present disclosure are directed towards a method for forming a memory device. The method includes forming a bottom electrode over a substrate. A data storage structure is formed on the bottom electrode. The data storage structure comprises a first atomic percentage of a first dopant and a second atomic percentage of a second dopant. The first atomic percentage is different from the second atomic percentage. A top electrode is formed on the data storage structure.


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