The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2025
Filed:
Nov. 01, 2022
Applicant:
Globalfoundries U.s. Inc., Malta, NY (US);
Inventors:
Anupam Dutta, Kolkata, IN;
Rajendran Krishnasamy, Essex Junction, VT (US);
Vvss Satyasuresh Choppalli, Bangalore, IN;
Vibhor Jain, Williston, VT (US);
Robert J. Gauthier, Jr., Williston, VT (US);
Assignee:
GlobalFoundries U.S. Inc., Malta, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/737 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7375 (2013.01);
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to heterojunction bipolar transistors (HBTs) with a buried trap rich region and methods of manufacture. The structure includes: a heterojunction bipolar transistor comprising a collector region, a base region and an emitter region; and at least one non-single-crystal semiconductor region in the collector region of the heterojunction bipolar transistor.