The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2025
Filed:
Jun. 17, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A filler cell region (in a semiconductor device) includes: gate segments, a majority of first ends of which substantially align with a first reference line that parallel and proximal to a top boundary of the filler cell region, and a majority of second ends of which substantially align with a second reference line that is parallel and proximal to a bottom boundary of the filler cell region. First and second gate segments extend continuously across the filler cell region; and third & fourth and fifth & sixth gate segments are correspondingly coaxial and separated by corresponding gate-gaps. Relative to the first direction: a first end of the first gate segment extends to the top boundary of the filler cell region; and a second end of the second gate segment extends to the bottom boundary of the filler cell region.