The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2025
Filed:
May. 06, 2022
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chih-Chao Chou, Hsinchu, TW;
Yi-Hsun Chiu, Hsinchu, TW;
Shang-Wen Chang, Hsinchu, TW;
Ching-Wei Tsai, Hsinchu, TW;
Chih-Hao Wang, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
Semiconductor devices and methods are provided which facilitate performing physical failure analysis (PFA) testing from a backside of the devices. In at least one example, a device is provided that includes a semiconductor device layer including a plurality of diffusion regions. A first interconnection structure is disposed on a first side of the semiconductor device layer, and the first interconnection structure includes at least one electrical contact. A second interconnection structure is disposed on a second side of the semiconductor device layer, and the second interconnection structure includes a plurality of backside power rails. Each of the backside power rails at least partially overlaps a respective diffusion region of the plurality of diffusion regions and defines openings which expose portions of the respective diffusion region at the second side of the semiconductor device layer.