The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 25, 2025

Filed:

Sep. 30, 2020
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Nazila Dadvand, Richardson, TX (US);

Christopher Daniel Manack, Flower Mound, TX (US);

Salvatore Frank Pavone, Murphy, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76873 (2013.01); H01L 23/53238 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 24/49 (2013.01); H01L 2224/13157 (2013.01);
Abstract

Described examples provide microelectronic devices and fabrication methods, including fabricating a contact structure by forming a titanium or titanium tungsten barrier layer on a conductive feature, forming a tin seed layer on the barrier layer, forming a copper structure on the seed layer above the conductive feature of the wafer or die, heating the seed layer and the copper structure to form a bronze material between the barrier layer and the copper structure, removing the seed layer using an etching process that selectively removes an exposed portion of the seed layer, and removing an exposed portion of the barrier layer.


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