The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 25, 2025

Filed:

Jun. 03, 2020
Applicants:

Lam Research Corporation, Fremont, CA (US);

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Bhaskar Nagabhirava, Cohoes, NY (US);

Phillip Friddle, Clifton Park, NY (US);

Michael Goss, Holliston, MA (US);

Yann Mignot, Slingerlands, NY (US);

Dominik Metzler, Saratoga Springs, NY (US);

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/67 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31144 (2013.01); H01L 21/31116 (2013.01); H01L 21/67069 (2013.01); H01L 21/76802 (2013.01);
Abstract

Methods of patterning vias and trenches using a polymerization protective liner after forming a lower patterned mask layer used for etching trenches on a semiconductor substrate prior to forming an upper patterned mask layer used for etching vias are provided. Methods involve forming a polymerization protective liner either nonconformally or conformally using silicon tetrachloride and methane polymerization. Polymerization protective liners may be sacrificial.


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