The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12232432 B1

Date of Patent:

Feb. 18, 2025

Filed:

Mar. 26, 2024

Memory cells with sidewall and bulk regions in vertical structures

Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Lorenzo Fratin, Buccinasco, IT;

Enrico Varesi, Milan, IT;

Paolo Fantini, Vimercate, IT;

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:

Holland & Hart LLP

Primary Examiner:

Mounir S Amer

Int. Cl.

CPC ...

H10N 70/20 (2023.01); H10B 63/00 (2023.01); H10N 70/00 (2023.01);

U.S. Cl.

CPC ...

H10N 70/231 (2023.02); H10B 63/84 (2023.02); H10N 70/041 (2023.02); H10N 70/063 (2023.02); H10N 70/066 (2023.02); H10N 70/882 (2023.02);

Abstract

Methods, systems, and devices for techniques for memory cells with sidewall and bulk regions in vertical structures are described. A memory cell may include a first electrode, a second electrode, and a self-selecting storage element between the first electrode and the second electrode. The bulk region may extend between the first electrode and the sidewall region. The bulk region may include a chalcogenide material having a first composition, and the sidewall region may include the chalcogenide material having a second composition that is different than the first composition. Also, the sidewall region may separate the bulk region from the second electrode.

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