The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2025
Filed:
Nov. 18, 2020
Applicant:
Kioxia Corporation, Tokyo, JP;
Inventors:
Assignee:
Kioxia Corporation, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/00 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01); H10B 41/27 (2023.01); H10B 43/27 (2023.01);
U.S. Cl.
CPC ...
H01L 21/76834 (2013.01); H01L 21/76801 (2013.01); H01L 21/76895 (2013.01); H01L 23/5222 (2013.01); H01L 23/53228 (2013.01); H01L 23/53238 (2013.01); H01L 23/53295 (2013.01); H01L 24/08 (2013.01); H01L 2224/08145 (2013.01); H10B 41/27 (2023.02); H10B 43/27 (2023.02);
Abstract
In one embodiment, the semiconductor device includes a first insulator including Si (silicon) and O (oxygen). The device further includes a first interconnect provided in the first insulator and including a metal element. The device further includes a second insulator provided on the first insulator and the first interconnect and including Si, C (carbon) and N (nitrogen), content of Si—H groups (H represents hydrogen) in the second insulator being 6.0% or less, content of Si—CHgroups in the second insulator being 0.5% or less. The device further includes a second interconnect provided on the first interconnect in the second insulator and including the metal element.