The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 18, 2025

Filed:

Oct. 25, 2021
Applicant:

Asm Ip Holding B.v., Almere, NL;

Inventors:

Seung Woo Choi, Cheonan-si, KR;

Seung Hwan Lee, Anseong-si, KR;

Ju Hyuk Park, Asan-si, KR;

Assignee:

ASM IP Holding B.V., Almere, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/687 (2006.01); C23C 16/40 (2006.01); C23C 16/458 (2006.01); H01L 21/02 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/68735 (2013.01); C23C 16/402 (2013.01); C23C 16/4583 (2013.01); H01L 21/02164 (2013.01); H01L 21/02274 (2013.01); H01L 21/67017 (2013.01);
Abstract

A substrate processing method capable of stably loading a substrate regardless of a variation in pressure of a reaction space includes supplying an inert gas; and forming a thin film by sequentially and repeatedly supplying a source gas, supplying a reaction gas, and activating the reaction gas, wherein a center portion of a substrate and a center portion of a susceptor are spaced apart from each other to form a separate space, the reaction space above the substrate and the separate space communicate with each other via one or more channels, an inert gas is introduced to the separate space through the one or more channels during the supplying of the inert gas, and the inert gas prevents pressure imbalance between the separate space and the reaction space during a thin film deposition process.


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