The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2025
Filed:
Apr. 05, 2021
Samsung Electronics Co., Ltd., Suwon-si, KR;
Dain Lee, Hwaseong-si, KR;
Yoongoo Kang, Hwaseong-si, KR;
Wonseok Yoo, Seoul, KR;
Jinwon Ma, Hwaseong-si, KR;
Kyungwook Park, Pohang-si, KR;
Changwoo Seo, Suwon-si, KR;
Suyoun Song, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A semiconductor device manufacturing method includes loading a semiconductor substrate into a chamber, the semiconductor substrate including a silicon oxide film, depositing a seed layer on the silicon oxide film by supplying a first silicon source material, supplying a purge gas on the seed layer, depositing a protective layer on the seed layer by repeating a first cycle, the first cycle including supplying a base source material layer and subsequently supplying the first silicon source material, and depositing a silicon nitride film on the protective layer by repeating a second cycle, the second cycle including supplying a second silicon source material and subsequently supplying a nitrogen source material.