The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 2025
Filed:
Jun. 01, 2021
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
A method for forming a semiconductor structure includes following operations. A first conductive layer is formed. A first dielectric layer is formed over the first conductive layer, and the first dielectric layer includes at least one trench exposing the first conductive layer. A second conductive layer is formed in the trench. A third conductive layer is formed in the trench, and a resistivity of the third conductive layer is greater than a resistivity of the second conductive layer. A second dielectric layer is formed over the third conductive layer. A phase change material is formed over the first dielectric layer.