The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 11, 2025

Filed:

Aug. 04, 2022
Applicant:

Changxin Memory Technologies, Inc., Hefei, CN;

Inventors:

Guangsu Shao, Hefei, CN;

Deyuan Xiao, Hefei, CN;

Yunsong Qiu, Hefei, CN;

Xingsong Su, Hefei, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10B 20/00 (2023.01); G11C 8/14 (2006.01); H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H10B 12/50 (2023.02); G11C 8/14 (2013.01); H10B 12/30 (2023.02); H10B 12/482 (2023.02); H10B 12/488 (2023.02);
Abstract

A semiconductor structure and a method for forming a semiconductor structure are provided. The semiconductor structure includes: a substrate; a laminate structure arranged on the substrate and including first semiconductor layers spaced apart from each other in a direction perpendicular to a top surface of the substrate, each first semiconductor layer including channel areas spaced apart from each other in a first direction, and first doped areas and second doped areas, each first doped area being arranged on one side of a respective one of the channel areas in a second direction, each second doped area being arranged on another side of the respective one of the channel areas in the second direction; and a word line structure including word lines extending in the first direction, an edge of each word line being flush with an edge of a respective one of the channel areas in the second direction.


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