The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 2025
Filed:
Mar. 29, 2022
Semiconductor Components Industries, Llc, Scottsdale, AZ (US);
Clifford Drowley, Santa Clara, CA (US);
Andrew P. Edwards, Santa Clara, CA (US);
Hao Cui, Santa Clara, CA (US);
Subhash Srinivas Pidaparthi, Santa Clara, CA (US);
Michael Craven, Santa Clara, CA (US);
David DeMuynck, Santa Clara, CA (US);
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Scottsdale, AZ (US);
Abstract
A III-N-based vertical transistor includes a III-N substrate, a source, a drain, and a channel comprising a III-N crystal material and extending between the source and the drain. The channel includes at least one sidewall surface aligned ±0.3° with respect to an m-plane of the III-N crystal material. The III-N-based vertical transistor also includes a gate electrically coupled to the at least one sidewall surface of the channel.