The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 11, 2025

Filed:

Jul. 01, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Ming-Fa Chen, Taichung, TW;

Sung-Feng Yeh, Taipei, TW;

Tzuan-Horng Liu, Taoyuan, TW;

Chao-Wen Shih, Hsinchu County, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 25/065 (2023.01); H01L 21/56 (2006.01); H01L 21/78 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/48 (2006.01); H01L 25/00 (2006.01);
U.S. Cl.
CPC ...
H01L 25/0652 (2013.01); H01L 21/565 (2013.01); H01L 21/78 (2013.01); H01L 23/3128 (2013.01); H01L 23/481 (2013.01); H01L 24/08 (2013.01); H01L 24/89 (2013.01); H01L 24/94 (2013.01); H01L 25/50 (2013.01); H01L 2224/08146 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01); H01L 2225/06544 (2013.01); H01L 2225/06565 (2013.01); H01L 2225/06586 (2013.01);
Abstract

A stacking structure including a first die, a second die stacked on the first die, and a third die and a fourth die disposed on the second die. The first die has a first metallization structure, and the first metallization structure includes first through die vias. The second die has a second metallization structure, and second metallization structure includes second through die vias. The first through die vias are bonded with the second through die vias, and sizes of the first through die vias are different from sizes of the second through die vias. The third and fourth dies are disposed side-by-side and are bonded with the second through die vias.


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