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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12224248 B1

PDFFull Text
Date of Patent:
Feb. 11, 2025

Filed:

Mar. 07, 2022

Semiconductor wafer and semiconductor dies formed therefrom including grooves along long edges of the semiconductor dies

Applicant:

Western Digital Technologies, Inc., San Jose, CA (US);

Inventors:

Chin-Tien Chiu, Taichung, TW;

Jia Li, Shanghai, CN;

Dongpeng Xue, Shanghai, CN;

Huirong Zhang, Shanghai, CN;

Guocheng Zhong, Shanghai, CN;

Xiaohui Wang, Shanghai, CN;

Hua Tan, Shanghai, CN;

Assignee:

Sandisk Technologies, Inc., Milpitas, CA (US);

Attorney:

Pearl Cohen Zedek Latzer Baratz LLP

Primary Examiner:

Douglas W Owens

Int. Cl.
CPC ...
H01L 23/544 (2006.01); H01L 25/065 (2023.01); H10B 41/20 (2023.01); H10B 43/20 (2023.01);
U.S. Cl.
CPC ...
H01L 23/544 (2013.01); H01L 25/0657 (2013.01); H01L 2223/5446 (2013.01); H01L 2223/5448 (2013.01); H01L 2225/06506 (2013.01); H01L 2225/0651 (2013.01); H01L 2225/06562 (2013.01); H10B 41/20 (2023.02); H10B 43/20 (2023.02);
Abstract

A semiconductor wafer includes semiconductor dies and laser grooves formed in the scribe lines along the long edges of the semiconductor dies. A laser groove extends between the long edges of two adjacent semiconductor dies to encompass the corners of the two adjacent semiconductor dies. When diced, the resulting semiconductor dies have portions of the corners removed.

Find Patent Forward Citations

Chiu, Chin-Tien. (2025). Semiconductor wafer and semiconductor dies formed therefrom including grooves along long edges of the semiconductor dies (U.S. Patent No. 12224248). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12224248

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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