The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 11, 2025

Filed:

Jul. 11, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chih-Chia Hu, Taipei, TW;

Ming-Fa Chen, Taichung, TW;

Sen-Bor Jan, Tainan, TW;

Meng-Wei Chiang, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 30/392 (2020.01); G06F 119/06 (2020.01); H01L 23/48 (2006.01); H01L 27/088 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
G06F 30/392 (2020.01); G06F 2119/06 (2020.01); H01L 23/481 (2013.01); H01L 27/0886 (2013.01); H01L 29/0653 (2013.01);
Abstract

A method includes generating an integrated circuit (IC) layout design and manufacturing an IC based on the IC layout design. Generating the IC layout design includes generating a pattern of a first shallow trench isolation (STI) region and a pattern of a through substrate via (TSV) region within the first STI region; a pattern of a second STI region surrounding the first STI region, the second STI region includes a first and second layout region, the second layout region being separated from the first STI region by the first layout region, first active regions of a group of dummy devices being defined within the first layout region, and second active regions of a group of active devices being defined within the second layout region; and patterns of first gates of the group of dummy devices in the first layout region, each of the first active regions having substantially identical dimension in a first direction.


Find Patent Forward Citations

Loading…