The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 2025
Filed:
Jul. 16, 2021
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Ming-Hui Weng, New Taipei, TW;
Chen-Yu Liu, Kaohsiung, TW;
Cheng-Han Wu, Taichung, TW;
Ching-Yu Chang, Yilang County, TW;
Chin-Hsiang Lin, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/32 (2006.01); G03F 1/82 (2012.01); G03F 7/00 (2006.01); G03F 7/30 (2006.01); G03F 7/40 (2006.01);
U.S. Cl.
CPC ...
G03F 7/40 (2013.01); G03F 1/82 (2013.01); G03F 7/30 (2013.01); G03F 7/322 (2013.01); G03F 7/70925 (2013.01);
Abstract
A method includes illuminating radiation to a resist layer over a substrate to pattern the resist layer. The patterned resist layer is developed by using a positive tone developer. The patterned resist layer is rinsed using a basic aqueous rinse solution. A pH value of the basic aqueous rinse solution is lower than a pH value of the developer, and a rinse temperature of rinsing the patterned resist layer is in a range of about 20° C. to about 40° C.