The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2025
Filed:
May. 27, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chun-Hung Chen, Hsinchu, TW;
Jhon-Jhy Liaw, Zhudong Township, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method for forming a semiconductor structure is provided. The method for forming the semiconductor structure includes forming a first trench and a second trench in a first semiconductor material. The first trench is deeper than the second trench. The method also includes forming a second semiconductor material in the first trench and the second trench, patterning a first portion of the second semiconductor material in the first trench and a first portion of the first semiconductor material below the first portion of the second semiconductor material into a first fin structure, and patterning a second portion of the second semiconductor material in the second trench and a second portion of the first semiconductor material below the second portion of the second semiconductor material into a second fin structure, and forming an isolation structure surrounding the first fin structure and the second fin structure.