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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12218241 B1

PDFFull Text
Date of Patent:
Feb. 04, 2025

Filed:

Mar. 28, 2022

Semiconductor device structure with etch stop layer for reducing rc delay

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chung-Ting Ko, Kaohsiung, TW;

Bo-Cyuan Lu, New Taipei, TW;

Jr-Hung Li, Chupei, TW;

Chi-On Chui, Hsinchu, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;

Attorney:

Birch, Stewart, Kolasch & Birch, LLP

Primary Examiner:

Didarul A Mazumder

Assistant Examiner:

Gustavo G Ramallo

Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/768 (2006.01); H01L 23/535 (2006.01); H01L 29/04 (2006.01); H01L 29/08 (2006.01); H01L 29/165 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 29/06 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7851 (2013.01); H01L 21/0217 (2013.01); H01L 21/022 (2013.01); H01L 21/02211 (2013.01); H01L 21/02247 (2013.01); H01L 21/02252 (2013.01); H01L 21/0228 (2013.01); H01L 21/76829 (2013.01); H01L 23/535 (2013.01); H01L 29/04 (2013.01); H01L 29/0847 (2013.01); H01L 29/165 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/7848 (2013.01); H01L 21/76897 (2013.01); H01L 21/823431 (2013.01); H01L 21/823468 (2013.01); H01L 21/823475 (2013.01); H01L 21/823481 (2013.01); H01L 27/0886 (2013.01); H01L 29/0649 (2013.01); H01L 29/517 (2013.01); H01L 29/6656 (2013.01);
Abstract

A semiconductor device structure is provided. The semiconductor device structure includes a substrate and a gate structure over the substrate. The semiconductor device structure also includes a spacer element covering a first sidewall of the gate structure. The semiconductor device structure further includes a source/drain portion in the substrate, and the spacer element is between the source/drain portion and the gate structure. In addition, the semiconductor device structure includes an etch stop layer covering the source/drain portion. The etch stop layer includes a first nitride layer covering the source/drain portion and having a second sidewall, and the second sidewall is in direct contact with the spacer element. The etch stop layer also includes a first silicon layer covering the first nitride layer and having a third sidewall, and the third sidewall is in direct contact with the spacer element.

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